Flexography-Printed In2O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm2 V−1 s−1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate.

Can Nano-Patterning Save Moore’s Law?

For years the academic community has explored a novel technology called selective deposition. Then, more than a year ago, Intel spearheaded an effort to bring the technology from the lab to the fab at 7nm or 5nm. Today, selective deposition is still in R&D, but it is gaining momentum in the industry.

Atomic layer deposition of alternative glass microchannel plates

The technique of atomic layer deposition(ALD) has enabled the development of alternativeglass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. 

Physics123 Example Problems - Thin Films and Interferometers

[Video] Here is a 24 minute video with example problems on thin films and interferometers from Brigham Young University. Enjoy it!

Taking 2D materials from lab to fab, and to technology

As we enter into the era of functional scaling where the cross-roads of More-Moore and More-Than-Moore meet, the search for new devices and their enabling material comes to the forefront of technology research. 2D crystals provide very interesting form-factors with respect to...

Researchers develop flexo-electric nanomaterial

Researchers at the University of Twente's MESA+ research institute, together with researchers from several other knowledge institutions, have developed a ‘flexo-electric’ nanomaterial. The material has built-in mechanical tension that changes shape when you apply electrical voltage...

Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces

Atomic layer deposition is used to form TiO2 films from tetrakis dimethyl amino titanium and H2O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy.

Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides

Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with nanometer layer thickness.

Turning periodic mesoporous organosilicas selective to CO2/CH4separation: deposition of aluminium oxide by atomic layer deposition

Nowadays, CO2/CH4 separation is considered extremely important with respect to making biogas economically viable. The search for efficient materials for biogas upgrading is at the cutting edge of research in the field of energy.

uniMorph - Fabricating Thin Film Composites for Shape-Changing Interfaces

[Video and full text available!] Researchers have been investigating shape-changing interfaces, however technologies for thin, reversible shape change remain complicated to fabricate. uniMorph is an enabling technology for rapid digital fabrication of customized thin-film shape-changing interfaces. 

Merck Performance Materials and SAFC Hitech join forces

Merck, a leading science and technology company, today announced the completion of its $ 17 billion acquisition of Sigma-Aldrich, creating one of the leaders in the $ 130 billion global industry to help solve the toughest problems in life science.

Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications

Nanolaminated Al2O3-HfO2 and Al2O3/HfO2 bilayer thin films have been grown by Plasma Enhanced Atomic Layer Deposition on silicon substrates. The nanolaminated system consists of alternating layers of Al2O3 and HfO2, while the bilayer system...

Atomic layer deposition of ultrathin Cu2O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy

The growth of ultrathin (<5 nm) Ru-doped Cu 2O films deposited on SiO2 by atomic layer deposition (ALD) and Cu films by subsequent reduction of the Cu 2O using HCO2H or CO is reported. Ru-doped Cu 2O has been deposited by a mixture of...

Comparison of hydrolytic and non-hydrolytic atomic layer deposition chemistries: Interfacial electronic properties at alumina-silicon interfaces

[Full text available] We report the differences in the passivation and electronic properties of aluminum oxide (Al2O3)deposited on silicon via traditional hydrolytic atomic layer deposition(ALD) and non-hydrolytic (NH) ALD chemistries. Traditional films were grown using trimethylaluminum (TMA) and water and...

BENEQ introduces the next revolution in industrial ALD

BENEQ introduces the next revolution in industrial Atomic Layer Deposition. Fast large-area spatial ALD is here! ...

KJLC European Manufacturing Expansion

[Video] KJLC® are proud to feature processes of their new enhanced manufacturing facility based at the European headquarters in Hastings. The new facility offers 5 axis, high precision machining with TiG welding, ultrasonic cleaning, FARO® arm inspection and vacuum bakeout. 

Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

[Full text available] The electronic structure of HfO2 thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV.

Molecular Chromophore–Catalyst Assemblies for Solar Fuel Applications

[...] Atomic layer deposition (ALD) has been used to stabilize phosphonate-derivatized chromophores, catalysts, and assemblies for applications in water oxidation catalysis and DSPEC water splitting...

Ni nanoparticles supported on CNTs with excellent activity produced by atomic layer deposition for hydrogen generation from hydrolysis of ammonia borane

Highly dispersed, uniform Ni nanoparticles with controlled loadings supported on multi-walled carbon nanotubes (CNTs) were synthesized by atomic layer deposition for hydrogen generation from hydrolysis of ammonia borane (AB). 

Mechanical properties of aluminum, zirconium, hafnium and tantalum oxides and their nanolaminates grown by atomic layer deposition

The mechanical properties of two different metal oxide nanolaminates comprised of Ta2O5 and Al2O3, HfO2 or ZrO2, grown on soda–lime glass substrate by atomic layer deposition, were investigated. Ta2O5 and Al2O3 layers were amorphous, whereas ZrO2and HfO2 possessed crystalline structure.

Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

This paper reports on aluminum oxide (AlO) thin film gas permeation barriers fabricated byatmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/Oplasma at moderate temperatures of 80 °C in a flow reactor.

Low-thermal budget flash light annealing for Al2O3 surface passivation

This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD-grown Al2O3 layers only reach carrier lifetimes of about 1 ms.

Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition

Chlorine doped SnO2 thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl4 and H2O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. 

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al2O3 and HfO2.

Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition

A radical-enhanced atomic layer deposition (RE-ALD) process is described for the synthesis of BiFeO3. Metalorganic precursors β-diketonate, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) iron(III) (Fe(TMHD)3), and Bi(TMHD)3 are coreacted with oxygen radicals (produced by a coaxial microwave cavity) as the oxidation source.

Highly porous N-doped TiO2 hollow fibers with internal three-dimensional interconnected nanotubes for photocatalytic hydrogen production

Fabrication of TiO2 hollow fibers was conducted by atomic layer deposition (ALD) with polysulfone fibers (PSFs) as a template. After the ALD process, the PSFs were removed by heat treatment at 500 °C for 1 h to form anatase TiO2 hollow fibers.

Delayed Dissolution and Small Molecule Release from Atomic Layer Deposition Coated Electrospun Nanofibers

Electrospun poly (vinyl alcohol) nanofibers are coated with aluminum oxide using atomic layer deposition (ALD) to control the dissolution rate of the nanofiber mats in high-humidity and aqueous environments. 

Call for papers: Atomic Layer Deposition for Novel Nanomaterials and Emerging Applications

The purpose of this special issue is to provide a research forum to exchange the latest outcomes with ALD for nanostructured materials and exploring potentials of ALD-resultant nanomaterials for future applications...

Vanadium dioxide film protected with an atomic-layer-deposited Al2O3 thin film

A VO2 film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al 2O3 film with atomic layer deposition (ALD) to protect the underlying VO2 film from degradation, and then studied the morphology and crystalline structure of the films.

Sensing Properties of Ultra-Thin TiO2Nanostructured Films Based Sensors

In this work, ultra-thin TiO2 nanostructured films, synthesized by atomic layer deposition method (ALD), were integrated in sensor structures. The effect of post-growth annealing and thickness of TiO2 samples on UV and hydrogen gas sensing properties is investigated.

Ordered 3D Thin-Shell Nanolattice Materials with Near-Unity Refractive Indices

The refractive indices of naturally occurring materials are limited, and there exists an index gap between indices of air and available solid materials. With many photonics and electronics applications, there has been considerable effort in...

A Protocol for High Sensitivity Surface Area Measurements of Nanostructured Films Enabled by Atomic Layer Deposition of TiO2

Due to their nanoscale dimensions, nanomaterials possess a very high specific surface area, which directly informs their properties in energy conversion and storage and catalytic chemical transformation, amongst other applications. 

Enabling High Solubility of ZnO in TiO2 by Nanolamination of Atomic Layer Deposition

Zn-doped TiO2 nanotubes were fabricated by nanolaminated packing of alternating layers of TiO2 and ZnO by atomic layer deposition (ALD) using polycarbonate (PC) membrane as a template. 

Epitaxial Atomic Layer Deposition of Sn-doped Indium Oxide

Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 °C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates.

Atomic layer stack deposition-annealing synthesis of CuWO4

A stack deposition-annealing (SDA) approach was demonstrated for the synthesis of CuWO4 viaatomic layer deposition (ALD).

Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition.

Decoration of the internal structure of mesoporous chromium terephthalate MIL-101 with NiO using atomic layer deposition

Mesoporous chromium terephthalate MIL-101 was modified with NiO via atomic layer deposition (ALD) process using bis(cyclopentadienyl)nickel (Ni(Cp)2) as a metal precursor and O2 as an oxidizing agent, respectively.

Evaluation of Atomic Layer Deposition coating as gas barrier against hydrogen gas and humidity

Effectiveness of HfO2 Atomic Layer Deposition coatings has been studied on ZnO varistors by IV tests, impedance spectroscopy, and highly accelerated life test. 

Effect of substrate composition on atomic layer deposition using self-assembled monolayers as blocking layers

The authors have examined the effect of two molecules that form self-assembled monolayers(SAMs) on the subsequent growth of TaNx by atomic layer deposition (ALD)...

Low-temperature atomic layer deposition of copper(II) oxide thin films

Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature...

ALD Pulse introduces Stefan Carrizo as Web master.

ALD Pulse introduces Mr. Stefan Carrizo as Web master. Stefan's skills in web content and social media will enrich........

PEALD present at:

Plasma Enhanced Atomic Layer Deposition at the 68th Annual Gaseous Electronics Conference / 9th International Conference on Reactive Plasmas / 33rd Symposium on Plasma Processing

Opportunities of Atomic Layer Deposition for Perovskite Solar Cells

Opportunities of Atomic Layer Deposition for Perovskite Solar Cells, Talk at ECS Meeting PhoenixTuesday, October 13, 2015: 09:20...

Low temperature PEALD of SiN moisture permeation barrier layers

Low temperature plasma-assisted atomic layer deposition of silicon nitride moisture permeation barrier layers

Tunnel junction for vertical-cavity surface-emitting laser

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact ....

Applied Materials to introduce a new system for Atomic Layer Deposition - Olympia™ ALD

BALD Engineering reports: Applied Materials to introduce a new system for Atomic Layer Deposition - Olympia™ ALD, read the full article here

Lam Research Releases High-Productivity VECTOR(R) ALD Oxide Deposition System

BALD Engineering Reports: Lam Research Releases High-Productivity VECTOR(R) ALD Oxide Deposition System, Read the full article here

Hamamatsu Licenses Arradiance®, Inc. Nanofilm Technology Portfolio

Hamamatsu Photonics K.K., one of the world’s leading producers of photodetectors and imagers today announced that it has licensed certain Arradiance....

Argonne chooses Beneq’s TFS 500 Atomic Layer Deposition System

The Beneq TFS 500 system has offered exceptional modularity and flexibility, allowing Argonne to continue driving breakthroughs in energy technology...

SENTECH Seminar on Plasma Process Technology 2015

SENTECH has organized a seminar on Plasma Process Technology on March 5th 2015, held at SENTECH Instruments in Berlin Adlershof..

Chinese Ambassador visits SENTECH

The Chinese ambassador in Germany, His Excellency Shi Mingde visited SENTECH Instruments GmbH on Friday, 10th of March 2015...

Picosun ALD protects printed circuit boards

Picosun Oy develops a novel, production-scale method for PCB protection, under a contract with the European Space Agency (ESA)...


SENTEC at SEMICON CHINA 2015, the Chinese SENTECH user community and guests met at the representative SENTECH stand....

Picosun expands its production capacity

Picosun Oy doubles its production capacity to enable faster delivery of cluster systems and automated batch ALD tools to its customers...

Levitech BV sells two Levitrack® ALD Systems

Levitech BV sells two Levitrack® ALD Systems to a major Japanese multinational...

ALD R&D Equipment Chart

ALD Pulse has put together, with the input and feedback from various manufacturers of ALD equipment, the ALD R&D EQUIPMENT CHART

Arradiance® Introduces Their GEMstar XT-P™

Arradiance® Introduces Their GEMstar XT-P™, the First Benchtop Thermal and Plasma-Enhanced ALD System for Research

ALD Pulse Interviews: Paul Poodt, Program manager Spatial ALD at Holst Centre / TNO

ALD Pulse had the honour to interview Paul Poodt, Program manager Spatial ALD at Holst Centre / TNO.

 Watch the interview.                                                                 

Three investments in France to accelerate the Group’s innovation

03/14/2014 Air Liquide has just decided on three investments in France to help accelerate the Group’s innovation and explore new markets. These three initiatives represent an investment of nearly €100 million.

SUNY CNSE, G450C, Quad-C… Albany rising!

The birth of SUNY CNSE (College of Nanoscale Science and Engineering), The G450C (Global 450 Consortium) The first step towards the Quad-C (Computer Chip Commercialization Center), all seems to be going well in Albany. Here is what President Obama thinks of it all.

PhD position on Advanced ALD

PhD position on Advanced ALD. The Electro-Optical Communication Systems (ECO) group, Department of Electrical Engineering of the Eindhoven University of Technology 

Global Atomic Layer Deposition Market 2012-2016

 TechNavio's report, the Global Atomic Layer Deposition Market 2012-2016, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the Americas, and the EMEA and APAC regions; it also covers the Global Atomic Layer Deposition market landscape and its growth prospects in the coming years......

Publication plan for the virtual project on the history of ALD 2.0

This is the updated version 2.0 to the publication plan of the “virtual project on the history of ALD”, introduction of which and invitation to participate can be found here and introductory slides from hereThe goals of the publication plans are...

Virtual Project, "History of ALD"

Introduction and invitation to participate, Riikka Puurunen (Dr.), Senior Scientist, VTT Finland. Aziz Abdulagatov (Dr.), Postdoctoral Fellow, NIST, USA. Jonas Sundqvist (Dr.), Group Leader, Fraunhofer.IPMS-CNT, Germany. Annina Titoff, Editor in Chief ALD Pulse, Finland.

Toward atomically-precise synthesis of supported bimetallic nanoparticles using ALD

Multi-metallic nanoparticles constitute a new class of materials offering the opportunity to tune the properties via the composition.....

Atomic layer deposition of environmentally benign SnTiOx as a potential ferroelectric material

[Full text] Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials, here the authors report the atomic layer deposition of tin titanate (SnTiOx) aiming to obtain the theoretically predicted perovskite structure that possesses ferroelectricity.

Atomic layer deposition process optimization by computational fluid dynamics

This paper presents a computational fluid dynamics model to optimize atomic layer deposition (ALD) process, in which the temperature, precursor mass fraction, mass flow and pressure have been quantitatively analyzed by combining surface chemical reactions with species transport.

Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films

[Full text] This paper presents a study on plasma enhanced atomic layer deposition(ALD) of TiO2 and WO3films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible.