Materials Science | University of Tartu

Materials Science is a combination of chemistry, physics and engineering and it can be learned at the University of Tartu. Already during their studies, students need to put their freshly obtained knowledge to the test as they solve... 

Enhanced Barrier Performance of Engineered Paper by Atomic Layer Deposited Al2O3 Thin Films

Surface modification of cellulosic paper is demonstrated by employing plasma assisted atomic layer deposition. Al2O3 thin films are deposited on paper substrates, prepared with different fiber sizes, to improve their barrier properties.

Ultratech Cambridge Nanotech Forms Research Collaboration With Northeastern University

Ultratech-CNT and Professor Thomas Webster at Northeastern University to Research the Use of ALD-Produced Nano-Materials in Medical Applications.

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S–O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing...

Second Call for abstracts @TNT2016

The call for abstracts at the Trends in Nanotechnology International Conference (TNT2016), has been extended one week more. The TNT2016 will take place in Fribourg (Switzerland): September 05-09, 2016. Submit your abstract here until May 10, 2016.

Join ICCG, the International Conference on Coatings on Glass and Plastics

For the 11th time, the International Conference on Coatings on Glass and Plastics ICCG will take place as one of the largest international science-to-science and business-to-science platforms in the field of 

A Tandem Catalyst with Multiple Metal-Oxide Interfaces Produced by Atomic Layer Deposition

Ideal heterogeneous tandem catalysts necessitate the rational design and integration of collaborative active sites. Herein, we report on the synthesis of a new tandem catalyst with multiple metal-oxide interfaces based on a tube-in-tube nanostructure using...

Plasma-Enhanced Atomic Layer Deposition of Iron Phosphate as a Positive Electrode for 3D Lithium-Ion Microbatteries

A new plasma-enhanced atomic layer deposition process was developed to deposit iron phosphate by using a sequence of trimethyl phosphate (TMP, Me3PO4) plasma, O2 plasma and tert-Butylferrocene (TBF, Fe(C5H5)(C5H4C(CH3)3)) exposures. Using in-situ... 

Last reminder: deadline for abstract submission on Friday

This is to remind you of the deadline to submit abstracts to the workshop “Synchrotron Radiation to study Atomic Layer Deposition”. The deadline is on Friday 22nd April until 23:59 CET. For more information have a look at the webpage of the workshop. Invited talks include...

NRL reveals novel uniform coating process of p-ALD

Particle atomic layer deposition is highlighted as a technology that can create new and exciting designer core/shell particles to be used as building blocks for the next generation of complex multifunctional nanocomposites," said Dr. Boris Feygelson, research engineer, NRL Electronics Science and Technology Division.

High-K Precursors for ICs to Reach ~$400M by 2020

Chemical precursors (inorganicand organic)used to form high dielectric constant (High-K) materials , metals and metal nitrides needed in advanced ICs are forecasted to reach $400M USD in global sales by 2020, as highlighted in TECHCET’s 2016 Critical Materials Report.

Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100)

In this work, we report on self-limiting growth of InN thin films at substrate temperatures as low as 200 °C by hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD). The precursors used in growthexperiments were... 

Workshop “Synchrotron Radiation to study Atomic Layer Deposition" Deadline for abstract submission extended

We inform you that the deadline for the submission of abstracts to the workshop “Synchrotron Radiation to study Atomic Layer Deposition", originally foreseen on April 4, has been postponed to...

Molecular-scale ALD discovery could have industrial-sized impact

Engineering researchers have developed a new method of making thin films -- materials that are essential in today's computers and electronic devices -- by adapting current atomic layer deposition techniques.

SoLayTec delivers to first Taiwanese customer

Dutch atomic layer deposition (ALD) equipment supplier SoLayTec will deliver its first equipment to a Taiwanese PV cell manufacturer this month. The deal is alongside bookings made from an additional three new customers, with the company saying it has now shipped tooling to China, Japan and Europe.

ALD in trouble: EU to set new ALD regulation!

Several sources close to EU Government Bodies have confirmed that a new regulatory framework has been discretely developped since as early as March 2014 to redefine "the Atomic Layer Deposition legal ground". The use of this technology in military applications beyond the old continents' control has struck fear in... 

Atomic layer deposition technology to help address the country’s future energy needs

the Argonne National Laboratory in the US made website in July 2007 reported 23, atomic layer deposition (ALD) with manufacturing more efficient and low cost solar cell, transistorlighting equipment and industrial to destroy the agent application prospect. The U.S. Argonne National Laboratory researchers are improving...

Highly Stable Copper Wire/Alumina/Polyimide Composite Films for Stretchable and Transparent Heaters

Transparent heaters, which are capable of withstanding a high dynamic strain, in contrast with those made of brittle indium tin oxide films, are increasingly needed for heating of next-generation flexible and stretchable electronics, such as artificial skins, touch screens, displays, and...

RT Atomic Layer Deposition of ZrO2 By Using Plasma Excited Water Vapor

Size of semiconductor devices in large-scale integration has reached the submicron range where gate oxide films in metal oxide semiconductor (MOS) devices need to be fabricated at a nanometer scale. Atomic layer deposition (ALD) is a technology for depositing dielectric films with...

Catalyst Design with Atomic Layer Deposition

Atomic layer deposition (ALD) has emerged as an interesting tool for the atomically precise design and synthesis of catalytic materials. Herein, we discuss examples in which the atomic precision has been used to elucidate reaction mechanisms and catalyst structure–property relationships by creating... 

Ultrafast triggered transient energy storage by atomic layer deposition into porous silicon for integrated transient electronics

Here we demonstrate the first on-chip silicon-integrated rechargeable transient power source based on atomic layer deposition (ALD) coating of vanadium oxide (VOx) into porous silicon. A stable specific capacitance above 20 F g−1 is achieved until...

VxIn(2–x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition

Substitutional alloys of several thin film semiconductors have been proposed as intermediate band (IB) materials for use in next-generation photovoltaics, which aim to utilize a larger fraction of the solar spectrum without sacrificing significant photovoltage. We demonstrate a novel...

Resistivity of atomic layer deposition grown ZnO: The influence of deposition temperature and post-annealing

Conductive zinc oxide (ZnO) films deposited by atomic layer deposition were studied as function of post-annealing treatments. Effusion experiments were conducted on ZnO films deposited at different temperatures. The influence of different annealing atmospheres on the resistivity of the films was...

Reminder: workshop "Synchrotron Radiation to study Atomic Layer Deposition”

Let us remind you of the workshop "Synchrotron Radiation to study Atomic Layer Deposition”, that will take place at ALBA (in Cerdanyola del Vallès, near Barcelona, Spain) from 13th to 15th June 2016. We are happy to announce the invited talks...

Blocking layers for nanocomposite photoanodes in dye sensitized solar cells: Comparison of atomic layer deposition and TiCl4 treatment

Charge recombination at the electrode/electrolyte interface can be prevented by efficient blocking layers. Here, TiO2 blocking layers have been deposited using atomic layer deposition (ALD) and TiCl4 treatment. The number of TiO2 ALD cycles was...

Workshop dedicated to Area Selective Deposition “ASD 2016”

Imec and the COST action HERALD will host a workshop dedicated to Area Selective Deposition “ASD 2016”, at imec in Leuven, Belgium on April 15th, 2016. This workshop will provide an excellent opportunity for the R&D community to learn about...

Detection of short ssDNA and dsDNA by current-voltage measurements using conical nanopores coated with Al2O3 by atomic layer deposition

DNA detection using solid state nanopores is limited by the difficulty of the detection of short DNA strands due to their very short dwell time. Here, we report on the fabrication of nanopores using a track-etching technique along with the atomic layer deposition of aluminum oxide. This method allows...

Influence of Working Pressure on the Al2O3 Film Properties in Plasma-Enhanced Atomic Layer Deposition

The effect of working pressure on the properties of Al2O3 films was investigated in direct-type plasma-enhanced atomic layer deposition. Increasing pressure yielded a denser Al2O3 film and a thinner SiOx interlayer, but only slightly affected the Al2O3 film thickness. The diffusivity of O atoms was...

Cyclic azasilanes as volatile and reactive precursors for atomic layer deposition of silicon dioxide

A suite of four volatile aminosilanes, cyclic azasilanes, was used to deposit silicon dioxide (SiO2) films by atomic layer deposition (ALD) over the temperature range 100–300 °C by reaction with O3. The unstable Si–N bonding makes the cyclic azasilanes chemically reactive with...

Self-limiting atomic layer deposition of barium oxide and barium titanate thin films using a novel pyrrole based precursor

Barium oxide (BaO) is a critical component for a number of materials offering high dielectric constants, high proton conductivity as well as potential applicability in superconductivity. For these properties to keep pace with continuous device miniaturization, it is necessary to study...

Call For Abstracts to the AVS 63rd International Symposium and Exhibition

On behalf of the AVS community, we invite you to submit an abstract to the AVS 63rd International Symposium and Exhibition, which will be held November 6–11, 2016 in Nashville, Tennessee.  The AVS Symposium is the premier forum for the science and technology of materials, interfaces, and processing.

Influence of crystal structure on friction coefficient of ZnO films prepared by atomic layer deposition

In this work, the influence of crystal structure on the friction coefficient of zinc oxide (ZnO) films was studied. The ZnO films were deposited on a Si (100) substrate using an atomic layer deposition process, and the crystal structure of the ZnO films was changed by... 

SALD ZnO on textured Si

Here is a 2 minute video for your consideration: Deposition of Zinc Oxide using Spatial Atomic Layer Deposition method; LMGP - Grenoble INP - France

Self Limiting Atomic Layer Deposition of Al2O3 on Perovskite surfaces: A Reality?

The feasibility of self-saturated atomic layer deposition on organo lead halide perovskite (MAPbIxCl3-x) surface through a well known trimethylaluminium (TMA) - water (H2O) chemistry is studied. Though the sequential dosages of...

Beneq Coatings Go To Space

Earlier in this blog, we have told many stories about our displays and thin film coating solutions in extreme conditions. Lumineq displays have been flying high in aircrafts,entered the Amazon rainforest in helicopters and running on fuel cells in Alaska. Our ALD coatings protect against...

Atomic layer deposition of zinc sulfide nanolayers on monocrystalline silicon substrates

The formation of zinc sulfide thin films via the atomic laminating of components from a gas phase on single-crystal silicon substrates with (100), (110), and (111) orientations is examined. The characteristic temperatures of changes in the mechanism of...

Non-alloyed contacts for gallium arsenide devices

Researchers in Korea have been developing improved non-alloyed contacts for gallium arsenide (GaAs) complementary metal-oxide-semiconductor (CMOS) and high-electron-mobility transistors (HEMTs) [Seung-Hwan Kim et al, IEEE Electron Device Letters, 3 February 2016]. Four universities were involved...

Picosun continues strong growth and expands facilities

More good news from Finland, Picosun Oy, the leading supplier of advanced ALD (Atomic Layer Deposition) thin film coating equipment reports of strong growth and rapid expansion in the global industrial markets. The total value of the company’s new tool orders increased...

Structural and electrical properties of sub-1-nm EOT HfO2 grown on InAs by atomic layer deposition and its thermal stability

We report on changes in the structural, interfacial, and electrical characteristics of sub-1nm EOT HfO2 grown on InAs by atomic layer deposition (ALD). When the HfO2 film was deposited on an InAs substrate at a temperature of 300 °C, the HfO2 was in an amorphous phase with a sharp...

Atomic Layer Deposition of Metal Fluorides Using HF-Pyridine as the Fluorine Precursor

The atomic layer deposition (ALD) of a variety of metal fluorides including ZrF4, MnF2, HfF4, MgF2, and ZnF2 was demonstrated using HF from a HF-pyridine solution. In situ quartz crystal microbalance (QCM) studies were utilized to examine the growth of these metal fluorides.

Call for papers: ALE 2016

Extending Moore’s law beyond the 10nm node will increasingly rely on high precision processes employing new materials with high-quality surfaces. Atomic layer etching & atomic layer clean technology is a promising pathway to achieve these fundamental requirements.

WoDiM 2016 Announcement and Call for Papers

The main objective of the workshop is to bring together specialists who work in the field of dielectrics and all aspects of their application in the field of micro and nanoelectronics. The forum is intended to provide...

Atomic Layer Deposition is Beneficial in the field of Nanotechnology and Microelectronics

Atomic layer deposition is a deposition technique capable of producing thin films of a variety of materials. Majority of the reactions taking place in the atomic layer deposition use multiple chemicals called precursors that react with the surface of a material in a sequential manner. Key applications of atomic layer deposition include...

Atomic layer deposition – tooling up nanotechnology step by step

Tools are useful when they meet all the demands of a particular objective, and invaluable when they continue to meet requirements that are ever evolving over time. Atomic layer deposition (ALD) was already a useful tool for thin films in the 1980s, although commercial use was then limited to... 

Photo-Assisted Atomic Layer Deposition and Chemical Vapor Deposition of Metal and Metal Oxide Thin Films

The deposition of high-quality metal thin films is an integral part of the modern microelectronic industry. As the downscaling of feature sizes continues, there is a constant demand for more accurate film deposition methods. Owing to its atomic level accuracy, atomic layer deposition (ALD) is a thin film deposition technique that...

Electro-thermal control of aluminum-doped zinc oxide/vanadium dioxide multilayered thin films for smart-device applications

The successful growth and study of VO2 thin films has been demonstrated using several deposition techniques, including reactive sputtering12, atomic layer deposition (ALD), pulsed laser deposition (PLD)14, chemical vapor deposition15, electron beam evaporation16, the sol-gel process17, and thermal evaporation18. These and... 

Merck presents new material advancements for next generation lithography

Merck aims to become the key solutions provider for semiconductor applications through its many acquisition activities in 2015. This includes acquiring SAFC Hitech, the leading provider of Atomic Layer Deposition (ALD) and...

Cumulative Effect of Fe2O3 on TiO2 Nanotubes via Atomic Layer Deposition with Enhanced Lithium Ion Storage Performance

Fe2O3 coated TiO2 nanotube (Fe2O3@TiO2 nanotube) composites anodes for lithium-ion batteries (LIBs) have been prepared by hydrothermal and atomic layer deposition (ALD) method. The composites anodes show... 

TSMC researchers claim first indium arsenide fin field-effect transistor

Researchers led by TSMC R&D Europe B.V. in Belgium claim the first demonstration of an unstrained indium arsenide (InAs) fin field-effect transistor (finFET) with 20nm fin height (Hfin). The team also included researchers from...

Imec and the COST action HERALD to host a workshop dedicated to Area Selective Deposition: “ASD 2016”

Imec and the COST action HERALD will host a workshop dedicated to Area Selective Deposition “ASD 2016”, at imec in Leuven, Belgium on April 15th, 2016. This ASD workshop will provide an excellent opportunity for the scientific community to...

Beneq Blog: size matters (and speed too)

In November last year, we shared the first news about our new spatial ALD equipmentthat works with moving sheet substrates. We also promised our dear readers more information later about how we would make spatial ALD bigger, faster and more flexible.

Surface Reaction Kinetics of Titanium Isopropoxide and Water in Atomic Layer Deposition

In atomic layer deposition processes (ALD), surface reactions of adsorbed precursor species lead to the formation of thin films. In order to achieve a well-controlled, self-limiting process, the substrate is sequentially exposed to different precursor molecules, each one until... 

Fabrication and Design of Metal Nano-Accordion Structures Using Atomic Layer Deposition and Interference Lithography

Metal nanostructures have attractive electrical and thermal properties as well as structural stability, and are important for applications in flexible conductors. In this study, we have developed a method to fabricate and control novel complex platinum nanostructures with... 

The registration to the workshop "Synchrotron Radiation to study Atomic Layer Deposition” is open!

The workshop will take place at ALBA (in Cerdanyola del Vallès, near Barcelona, Spain) from 13th to 15th June 2016. We defined the registration fees trying to favor students. The actual fees are possible thanks to the support given by...

Job opening: Atomic layer deposition of 2D transition metal dichalcogenide nanolayers

[From source] We are looking for two talented and enthusiastic PhD-students with an MSc degree in (applied) physics, chemistry or electrical engineering or similar. The ideal candidate is pro-active and independent and has proven experience with nanomaterials processing or...

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems...

Strong coupling of plasmon and nanocavity modes for dual band, near-perfect absorbers and ultrathin photovoltaics

When optical resonances interact strongly, hybridized modes are formed with mixed properties inherited from the basic modes. Strong coupling therefore tends to equalize properties such as damping and oscillator strength of the spectrally separate resonance modes. This effect is...

Epiluvac and SAMCO collaborate to offer processing equipment for WBG materials in Nordic countries

Epiluvac AB of Lund, Sweden – which was founded in 2013 and produces silicon carbide (SiC) chemical vapour deposition (CVD) systems used in power device research – has entered into a collaboration to introduce semiconductor process equipment maker SAMCO Inc of...

Atomic/Molecular Layer Deposition of Lithium Terephthalate Thin Films as High Rate Capability Li-Ion Battery Anodes

We demonstrate the fabrication of high-quality electrochemically active organic lithium electrode thin films by the currently strongly emerging combined atomic/molecular layer deposition (ALD/MLD) technique using lithium terephthalate, a recently found...

Ultratech And Qoniac Jointly Develop 3D Lithography APC Solution

Building on the companies' respective leadership in 3D inspection and lithography APC, the solution will allow Ultratech's Superfast to interface with Qoniac's OVALiS, the leading lithography process optimization solution.

Protective capping and surface passivation of III-V nanowires by atomic layer deposition

Low temperature (∼200 °C) grownatomic layer deposition(ALD) films of AlN, TiN, Al2O3, GaN, and TiO2were tested for protective capping and surface passivation of bottom-up grownIII-V(GaAs and InP)nanowires (NWs), and top-down fabricated InPnanopillars. For as-grown GaAs NWs, only the...

Ultralow loading palladium nanocatalysts prepared by atomic layer deposition on three-dimensional graphite-coated nickel foam to enhanced ethanol electro-oxidation reaction

A novel three-dimensional graphite-coated nickel foam (GNF) was synthesized by the chemical vapor deposition (CVD) method, and palladium nanoparticles (Pd NPs) were successfully synthesized on GNF support by metal atomic layer deposition (ALD) technology for the first time. 

ARRADIANCE Realizes Record Atomic Layer Deposition System Sales Growth

Sales of GEMStar XT benchtop ALD systems including rapid market adoption of the new GEMStar XT-P plasma-enhanced system resulted in 73% sales growth in 2015 Coupled with a strengthened balance sheet, Arradiance expects to...

MEMS revolutionized with Picosun’s batch ALD cluster tools

Picosun Oy, the leading supplier of high quality ALD (Atomic Layer Deposition) thin film coating solutions for industrial production, has revolutionized cost-effective MEMS manufacturing with high throughput PICOPLATFORM™ batch ALD cluster technology.

Low Temperature Thermal Atomic Layer Deposition of Cobalt Metal Films

The atomic layer deposition of cobalt metal films is described using bis(1,4-di-tert-butyl-1,3-diazabutadienyl)cobalt(II) and formic acid as precursors. A growth rate of approximately 0.95 Å/cycle was observed within the 170-180 °C ALD window. X-ray photoelectron spectroscopy of a film grown at 180 °C showed...

A Simple Approach for Molecular Controlled Release based on Atomic Layer Deposition Hybridized Organic-Inorganic Layers

On-demand release of bioactive substances with high spatial and temporal control offers ground-breaking possibilities in the field of life sciences. However, available strategies for developing such release systems lack the possibility of combining...

Towards Atomic-Scale Patterned Atomic Layer Deposition: Reactions of Al2O3 Precursors on a Si(001) Surface with Mixed Functionalizations

In this paper, we use Density Functional Theory (DFT) calculations to investigate the initial surface reactions involved in the atomic layer deposition (ALD) of Al2O3 from H2O and Al(CH3)3 (trimethylaluminum, TMA) molecular precursors on the Si(001)-(2×1) reconstructed surface with...

Atomic Layer Deposition of MnS: Phase Control and Electrochemical Applications

Manganese sulfide (MnS) thin films were synthesized via atomic layer deposition (ALD) using gaseous manganese bis(ethylcyclopentadienyl) and hydrogen sulfide as precursors. At deposition temperatures ≤150 °C phase-pure γ-MnS thin films were deposited...

Manipulating inter pillar gap in pillar array ultra-thin layer planar chromatography platforms

An advantage of separation platforms based on deterministic micro- and nano-fabrication, relative to traditional systems based on packed beds of particles, is exquisite control of all morphological parameters. For example,...

Atomic layer deposition of copper sulfide thin films

Atomic Layer Deposition (ALD) of copper sulfide (CuxS) thin films from Cu(acac)2 (acac = acetylacetonate = 2,4-pentanedionate) and H2S as Cu and S precursors is reported. Typical self-saturated reactions (“ALD window“) are obtained in...

Remarkable O2 permeation through a mixed conducting carbon capture membrane functionalized by atomic layer deposition

The development of energy-efficient and cost-competitive carbon capture technology is of vital importance to effective reduction of carbon emissions and mitigation of global climate change. The present work reports that...

Industrial Growth is Expected to Boost the Demand for Atomic Layer Deposition Market

Growth in the end-user industries is expected to boost the demand for atomic layer deposition instruments. The electronics industry is growing at a rapid rate, especially in the emerging economies of...

What is limiting low-temperature atomic layer deposition of Al2O3? A vibrational sum-frequency generation study

[Full text available] The surface reactions during atomic layer deposition(ALD) of Al2O3 from Al(CH3)3 and H2O have been studied with broadband sum-frequency generation to reveal what is limiting thegrowth at low temperatures.

Synchrotron Radiation to study Atomic Layer Deposition

Atomic Layer Deposition (ALD) relies on sequential exposures of the sample surface to vapor-phase chemical precursors to deposit thin films in a cyclic manner. Each ALD cycle usually results in...

570 mV Photovoltage, Stabilized n-Si/CoOx Heterojunction Photoanodes Fabricated Using Atomic Layer Deposition

 Heterojunction photoanodes, consisting of n-type crystalline Si(100) substrates coated with a thin ~50 nm film of cobalt oxide fabricated using atomic-layer deposition (ALD), exhibited photocurrent-onset potentials of -205 ± 20 mV relative to the formal potential for...

Stanford Researchers Advance Area Selective Atomic Layer Deposition to Develop Higher Performing, More Energy Efficient Electronics

Stanford University researchers sponsored by Semiconductor Research Corporation(SRC), the world’s leading university-research consortium for semiconductor technologies, have developed a new area selective atomic layer deposition (ALD) process that promises to...

Native Oxide Transport and Removal During the Atomic Layer Deposition of TiO2 Films on GaAs(100) Surfaces

In this manuscript we studied the evolution and transport of the native oxides during the atomic layer deposition (ALD) of TiO2 on GaAs(100) from tetrakis dimethyl amino titanium and H2O. Arsenic oxide transport through the TiO2 film and removal during the ALD process was investigated using...

CPI and Beneq sign collaboration agreement to commercialise atomic layer deposition technologies

The Centre for Process Innovation (CPI) and Beneq have signed a long term collaboration agreement for the use of atomic layer deposition (ALD) technologies in printable electronics applications.

OTCQX CEO Video Series: Thin Film Electronics ASA (OTCQX: TFECY; TFECF)

Still wrapping up 2015? Here is a video from OTC Markets. "As we near the end of the year, we are pleased to share our final OTCQX CEO Video for 2015, featuring an interview with Davor Sutija, CEO of Thin Film Electronics ASA (OTCQX: TFECY; TFECF)". 

Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

This work reports the self-limiting synthesis of an atomically thin, two dimensional transition metal dichalcogenides (2D TMDCs) in the form of MoS2. The layer controllability and large area uniformity essential for electronic and optical device applications is achieved through atomic layer deposition...

Potential Pulse Atomic Layer Deposition (PP-ALD) of Cu2Se

Crystalline thin films of cuprous selenide (Cu2Se) were electrodeposited at room temperature from an aqueous solution containing elemental precursors for Cu and Se, using a potential pulse version of atomic layer deposition (PP-ALD)...

Bulgarian Academy of Sciences Presents New Nanotechnology Equipment

The Institute of Solid State Physics of the Bulgarian Academy of Sciences (ISSP-BAS) held a workshop on “Nanotechnology and nanomaterials: new equipment in the ISSP-BAS” with representatives of leading companies in the nanotechnology field in Bulgaria at the Inter Expo hotel in Sofia on December 10.

Workshop "Synchrotron Radiation to study Atomic Layer Deposition"

Are you up for a trip to Barcelona? The synchrotron facility ALBA, in Barcelona (Spain) and HERALD are organizing the first workshop on Synchrotron Radiation (SR) and ALD.

VTT has published the first map of Finnish science - Finnish science has become diverse

VTT Technical Research Centre of Finland Ltd has analysed changes in the Finnish research system in 1995–2011 and published, for the first time, a map of Finnish science.  Finnish science has become diverse, and alongside traditional medical and natural sciences

Thin Film Encapsulation for flexible OLEDs (Meyer Burger)

[Video] Here is an interesting 20+ minute video for your consideration: OLED Auditorium presentation, by Meyer Burger. 

PICOSUN™ P-300 Advanced with PICOBATCH™ vacuum batch loading

[Video] Do not miss the latest videos from Picosun, including the following: PICOSUN™ P-300 Advanced with PICOBATCH™ vacuum batch loading.

Imperceptible and Ultraflexible p-Type Transistors and Macroelectronics Based on Carbon Nanotubes

Flexible thin-film transistors based on semiconducting single-wall carbon nanotubes are promising for flexible digital circuits, artificial skins, radio frequency devices, active-matrix-based displays, and sensors due to the outstanding electrical properties and intrinsic mechanical strength of carbon nanotubes.

Ultralight shape-recovering plate mechanical metamaterials

[Video] Directly linked to our previous entry (just below). Unusual mechanical properties of mechanical metamaterials are determined by their carefully designed and tightly controlled geometry at the macro- or nanoscale. We introduce a class of nanoscale mechanical metamaterials created by forming continuous corrugated plates out of ultrathin films.

Researchers make thinnest plates that can be picked up by hand

Scientists and engineers are engaged in a global race to make new materials that are as thin, light and strong as possible. These properties can be achieved by designing materials at the atomic level, but they are only useful if they can leave the carefully controlled conditions of a lab.

Atomic layer deposited cobalt oxide: An efficient catalyst for NaBH4 hydrolysis

Thin films of cobalt oxide are deposited by atomic layer deposition using dicobalt octacarbonyl [Co2(CO)8] and ozone (O3) at 50 °C on microscope glass substrates and polished Si(111) wafers. Self-saturated growth mechanism is...

NCD News: Signed the contract to supply ALD equipment to HHI, worth ~4 million US dollars

NCD has recently contracted with HYUNDAI HEAVY INDUSTRIES(HHI) to supply 200MW of solar cell manufacture equipment which would be worth about 4million US dollars. The equipment is Lucida GS Series ALD system for high efficiency...

Medical and aerospace electronics powered by Picosun ALD

Picosun Oy, leading supplier of high end Atomic Layer Deposition (ALD) thin film coating solutions for global industries, launches ALD equipment for production of high efficiency 3D-integrated trench capacitors.

Metal–Organic Framework Thin Films as Platforms for Atomic Layer Deposition of Cobalt Ions to Enable Electrocatalytic Water Oxidation

Thin films of the metal-organic framework (MOF) NU-1000 were grown on conducting glass substrates. The films uniformly cover the conducting glass substrates and are composed of free-standing sub-micrometer rods.

Alternate nonmagnetic and magnetic multilayer nanofilms deposited on carbon nanocoils by atomic layer deposition to tune microwave absorption property

In this study, alternate nonmagnetic Al2O3 and magnetic Fe3O4 multilayer nanofilms with precisely controlled thickness were deposited on carbon nanocoils by atomic layer deposition. The as-synthesized composites exhibit superior...

Atomic layer deposition of alternative glass microchannel plates

The technique of atomic layer deposition(ALD)has enabled the development of alternativeglass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20x20cm), high aspect ratio (60:1 L/d) glass substrates.

Atomic layer deposition of boron-containing films using B2F4

Ultrathin and conformal boron-containing atomic layer deposition(ALD)films could be used as a shallow dopant source for advanced transistor structures in microelectronics manufacturing. With this application in mind, diboron tetrafluoride (B2F4) was explored as an ALD precursor for the deposition of boron containing films.

Blistering during the atomic layer deposition of iridium

The authors report on the formation of blisters during the atomic layer deposition of iridium usingiridium acetylacetonate and oxygen precursors. Films deposited on fused silica substrates led to sparsely distributed large blisters while in the case of silicon with native oxide additional small blisters with a high density was observed. 

Flexography-Printed In2O3 Semiconductor Layers for High-Mobility Thin-Film Transistors on Flexible Plastic Substrate

Industrially scalable and roll-to-roll-compatible fabrication methods are utilized to fabricate high-mobility (≈8 cm2 V−1 s−1) nanocrystalline In2O3 thin-film transistors (TFTs) on an flexible plastic substrate.

Can Nano-Patterning Save Moore’s Law?

For years the academic community has explored a novel technology called selective deposition. Then, more than a year ago, Intel spearheaded an effort to bring the technology from the lab to the fab at 7nm or 5nm. Today, selective deposition is still in R&D, but it is gaining momentum in the industry.

Atomic layer deposition of alternative glass microchannel plates

The technique of atomic layer deposition(ALD) has enabled the development of alternativeglass microchannel plates (MCPs) with independently tunable resistive and emissive layers, resulting in excellent thickness uniformity across the large area (20 × 20 cm), high aspect ratio (60:1 L/d) glass substrates. 

Physics123 Example Problems - Thin Films and Interferometers

[Video] Here is a 24 minute video with example problems on thin films and interferometers from Brigham Young University. Enjoy it!

Taking 2D materials from lab to fab, and to technology

As we enter into the era of functional scaling where the cross-roads of More-Moore and More-Than-Moore meet, the search for new devices and their enabling material comes to the forefront of technology research. 2D crystals provide very interesting form-factors with respect to...

Researchers develop flexo-electric nanomaterial

Researchers at the University of Twente's MESA+ research institute, together with researchers from several other knowledge institutions, have developed a ‘flexo-electric’ nanomaterial. The material has built-in mechanical tension that changes shape when you apply electrical voltage...

Diffusion and interface evolution during the atomic layer deposition of TiO2 on GaAs(100) and InAs(100) surfaces

Atomic layer deposition is used to form TiO2 films from tetrakis dimethyl amino titanium and H2O on native oxide GaAs(100) and InAs(100) surfaces. The evolution of the film/substrate interface is examined as a function of the deposition temperature (100–325 °C) using ex situ x-ray photoelectron spectroscopy.

Structural and Dielectric Properties of Subnanometric Laminates of Binary Oxides

Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with nanometer layer thickness.

Turning periodic mesoporous organosilicas selective to CO2/CH4separation: deposition of aluminium oxide by atomic layer deposition

Nowadays, CO2/CH4 separation is considered extremely important with respect to making biogas economically viable. The search for efficient materials for biogas upgrading is at the cutting edge of research in the field of energy.

uniMorph - Fabricating Thin Film Composites for Shape-Changing Interfaces

[Video and full text available!] Researchers have been investigating shape-changing interfaces, however technologies for thin, reversible shape change remain complicated to fabricate. uniMorph is an enabling technology for rapid digital fabrication of customized thin-film shape-changing interfaces. 

Merck Performance Materials and SAFC Hitech join forces

Merck, a leading science and technology company, today announced the completion of its $ 17 billion acquisition of Sigma-Aldrich, creating one of the leaders in the $ 130 billion global industry to help solve the toughest problems in life science.

Laminated Al2O3-HfO2 layers grown by atomic layer deposition for microelectronics applications

Nanolaminated Al2O3-HfO2 and Al2O3/HfO2 bilayer thin films have been grown by Plasma Enhanced Atomic Layer Deposition on silicon substrates. The nanolaminated system consists of alternating layers of Al2O3 and HfO2, while the bilayer system...

Atomic layer deposition of ultrathin Cu2O and subsequent reduction to Cu studied by in situ x-ray photoelectron spectroscopy

The growth of ultrathin (<5 nm) Ru-doped Cu 2O films deposited on SiO2 by atomic layer deposition (ALD) and Cu films by subsequent reduction of the Cu 2O using HCO2H or CO is reported. Ru-doped Cu 2O has been deposited by a mixture of...

Comparison of hydrolytic and non-hydrolytic atomic layer deposition chemistries: Interfacial electronic properties at alumina-silicon interfaces

[Full text available] We report the differences in the passivation and electronic properties of aluminum oxide (Al2O3)deposited on silicon via traditional hydrolytic atomic layer deposition(ALD) and non-hydrolytic (NH) ALD chemistries. Traditional films were grown using trimethylaluminum (TMA) and water and...

BENEQ introduces the next revolution in industrial ALD

BENEQ introduces the next revolution in industrial Atomic Layer Deposition. Fast large-area spatial ALD is here! ...

KJLC European Manufacturing Expansion

[Video] KJLC® are proud to feature processes of their new enhanced manufacturing facility based at the European headquarters in Hastings. The new facility offers 5 axis, high precision machining with TiG welding, ultrasonic cleaning, FARO® arm inspection and vacuum bakeout. 

Spectroscopic investigation of the electronic structure of thin atomic layer deposition HfO2 films

[Full text available] The electronic structure of HfO2 thin films is investigated employing resonant photoelectron spectroscopy (resPES). The detailed analysis of the O1s resonance profile enables the determination of the partial density of states for the valence and the conduction bands as well as the electronic band gap to be 6.2 eV.

Molecular Chromophore–Catalyst Assemblies for Solar Fuel Applications

[...] Atomic layer deposition (ALD) has been used to stabilize phosphonate-derivatized chromophores, catalysts, and assemblies for applications in water oxidation catalysis and DSPEC water splitting...

Ni nanoparticles supported on CNTs with excellent activity produced by atomic layer deposition for hydrogen generation from hydrolysis of ammonia borane

Highly dispersed, uniform Ni nanoparticles with controlled loadings supported on multi-walled carbon nanotubes (CNTs) were synthesized by atomic layer deposition for hydrogen generation from hydrolysis of ammonia borane (AB). 

Mechanical properties of aluminum, zirconium, hafnium and tantalum oxides and their nanolaminates grown by atomic layer deposition

The mechanical properties of two different metal oxide nanolaminates comprised of Ta2O5 and Al2O3, HfO2 or ZrO2, grown on soda–lime glass substrate by atomic layer deposition, were investigated. Ta2O5 and Al2O3 layers were amorphous, whereas ZrO2and HfO2 possessed crystalline structure.

Gas permeation barriers deposited by atmospheric pressure plasma enhanced atomic layer deposition

This paper reports on aluminum oxide (AlO) thin film gas permeation barriers fabricated byatmospheric pressure atomic layer deposition (APPALD) using trimethylaluminum and an Ar/Oplasma at moderate temperatures of 80 °C in a flow reactor.

Low-thermal budget flash light annealing for Al2O3 surface passivation

This value is achieved due to a very low interface trap density of below 1010 eV–1 cm–2 and a fixed charge density of (2–3) × 1012 cm–2. In contrast, plasma ALD-grown Al2O3 layers only reach carrier lifetimes of about 1 ms.

Morphology, composition and electrical properties of SnO2:Cl thin films grown by atomic layer deposition

Chlorine doped SnO2 thin films were prepared using atomic layer deposition at temperatures between 300 and 450 °C using SnCl4 and H2O as the reactants. Composition, structure, surface morphology, and electrical properties of the as-deposited films were examined. 

Atomic layer deposition of perovskite oxides and their epitaxial integration with Si, Ge, and other semiconductors

Atomic layer deposition (ALD) is a proven technique for the conformal deposition of oxide thin films with nanoscale thickness control. Most successful industrial applications have been with binary oxides, such as Al2O3 and HfO2.

Synthesis and Characterization of BiFeO3 Thin Films for Multiferroic Applications by Radical Enhanced Atomic Layer Deposition

A radical-enhanced atomic layer deposition (RE-ALD) process is described for the synthesis of BiFeO3. Metalorganic precursors β-diketonate, tris(2,2,6,6-tetramethyl-3,5-heptanedionato) iron(III) (Fe(TMHD)3), and Bi(TMHD)3 are coreacted with oxygen radicals (produced by a coaxial microwave cavity) as the oxidation source.

Highly porous N-doped TiO2 hollow fibers with internal three-dimensional interconnected nanotubes for photocatalytic hydrogen production

Fabrication of TiO2 hollow fibers was conducted by atomic layer deposition (ALD) with polysulfone fibers (PSFs) as a template. After the ALD process, the PSFs were removed by heat treatment at 500 °C for 1 h to form anatase TiO2 hollow fibers.

Delayed Dissolution and Small Molecule Release from Atomic Layer Deposition Coated Electrospun Nanofibers

Electrospun poly (vinyl alcohol) nanofibers are coated with aluminum oxide using atomic layer deposition (ALD) to control the dissolution rate of the nanofiber mats in high-humidity and aqueous environments. 

Call for papers: Atomic Layer Deposition for Novel Nanomaterials and Emerging Applications

The purpose of this special issue is to provide a research forum to exchange the latest outcomes with ALD for nanostructured materials and exploring potentials of ALD-resultant nanomaterials for future applications...

Vanadium dioxide film protected with an atomic-layer-deposited Al2O3 thin film

A VO2 film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al 2O3 film with atomic layer deposition (ALD) to protect the underlying VO2 film from degradation, and then studied the morphology and crystalline structure of the films.

Sensing Properties of Ultra-Thin TiO2Nanostructured Films Based Sensors

In this work, ultra-thin TiO2 nanostructured films, synthesized by atomic layer deposition method (ALD), were integrated in sensor structures. The effect of post-growth annealing and thickness of TiO2 samples on UV and hydrogen gas sensing properties is investigated.

Ordered 3D Thin-Shell Nanolattice Materials with Near-Unity Refractive Indices

The refractive indices of naturally occurring materials are limited, and there exists an index gap between indices of air and available solid materials. With many photonics and electronics applications, there has been considerable effort in...

A Protocol for High Sensitivity Surface Area Measurements of Nanostructured Films Enabled by Atomic Layer Deposition of TiO2

Due to their nanoscale dimensions, nanomaterials possess a very high specific surface area, which directly informs their properties in energy conversion and storage and catalytic chemical transformation, amongst other applications. 

Enabling High Solubility of ZnO in TiO2 by Nanolamination of Atomic Layer Deposition

Zn-doped TiO2 nanotubes were fabricated by nanolaminated packing of alternating layers of TiO2 and ZnO by atomic layer deposition (ALD) using polycarbonate (PC) membrane as a template. 

Epitaxial Atomic Layer Deposition of Sn-doped Indium Oxide

Coherently strained, epitaxial Sn-doped In2O3 (ITO) thin films were fabricated at temperatures as low as 250 °C using atomic layer deposition (ALD) on (001)-, (011)-, and (111)-oriented single-crystal Y-stabilized ZrO2 (YSZ) substrates.

Atomic layer stack deposition-annealing synthesis of CuWO4

A stack deposition-annealing (SDA) approach was demonstrated for the synthesis of CuWO4 viaatomic layer deposition (ALD).

Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier

The fabrication is reported of nanodamascene metallic single electron transistors that take advantage of unique properties of chemical mechanical polishing and atomic layer deposition.

Decoration of the internal structure of mesoporous chromium terephthalate MIL-101 with NiO using atomic layer deposition

Mesoporous chromium terephthalate MIL-101 was modified with NiO via atomic layer deposition (ALD) process using bis(cyclopentadienyl)nickel (Ni(Cp)2) as a metal precursor and O2 as an oxidizing agent, respectively.

Evaluation of Atomic Layer Deposition coating as gas barrier against hydrogen gas and humidity

Effectiveness of HfO2 Atomic Layer Deposition coatings has been studied on ZnO varistors by IV tests, impedance spectroscopy, and highly accelerated life test. 

Effect of substrate composition on atomic layer deposition using self-assembled monolayers as blocking layers

The authors have examined the effect of two molecules that form self-assembled monolayers(SAMs) on the subsequent growth of TaNx by atomic layer deposition (ALD)...

Low-temperature atomic layer deposition of copper(II) oxide thin films

Copper(II) oxide thin films were grown by atomic layer deposition (ALD) using bis-(dimethylamino-2-propoxide)copper [Cu(dmap)2] and ozone in a temperature...

ALD Pulse introduces Stefan Carrizo as Web master.

ALD Pulse introduces Mr. Stefan Carrizo as Web master. Stefan's skills in web content and social media will enrich........

PEALD present at:

Plasma Enhanced Atomic Layer Deposition at the 68th Annual Gaseous Electronics Conference / 9th International Conference on Reactive Plasmas / 33rd Symposium on Plasma Processing

Opportunities of Atomic Layer Deposition for Perovskite Solar Cells

Opportunities of Atomic Layer Deposition for Perovskite Solar Cells, Talk at ECS Meeting PhoenixTuesday, October 13, 2015: 09:20...

Low temperature PEALD of SiN moisture permeation barrier layers

Low temperature plasma-assisted atomic layer deposition of silicon nitride moisture permeation barrier layers

Tunnel junction for vertical-cavity surface-emitting laser

Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact ....

Applied Materials to introduce a new system for Atomic Layer Deposition - Olympia™ ALD

BALD Engineering reports: Applied Materials to introduce a new system for Atomic Layer Deposition - Olympia™ ALD, read the full article here

Lam Research Releases High-Productivity VECTOR(R) ALD Oxide Deposition System

BALD Engineering Reports: Lam Research Releases High-Productivity VECTOR(R) ALD Oxide Deposition System, Read the full article here

Hamamatsu Licenses Arradiance®, Inc. Nanofilm Technology Portfolio

Hamamatsu Photonics K.K., one of the world’s leading producers of photodetectors and imagers today announced that it has licensed certain Arradiance....

Argonne chooses Beneq’s TFS 500 Atomic Layer Deposition System

The Beneq TFS 500 system has offered exceptional modularity and flexibility, allowing Argonne to continue driving breakthroughs in energy technology...

SENTECH Seminar on Plasma Process Technology 2015

SENTECH has organized a seminar on Plasma Process Technology on March 5th 2015, held at SENTECH Instruments in Berlin Adlershof..

Chinese Ambassador visits SENTECH

The Chinese ambassador in Germany, His Excellency Shi Mingde visited SENTECH Instruments GmbH on Friday, 10th of March 2015...

Picosun ALD protects printed circuit boards

Picosun Oy develops a novel, production-scale method for PCB protection, under a contract with the European Space Agency (ESA)...

SENTECH in SEMICON China 2015

SENTEC at SEMICON CHINA 2015, the Chinese SENTECH user community and guests met at the representative SENTECH stand....

Picosun expands its production capacity

Picosun Oy doubles its production capacity to enable faster delivery of cluster systems and automated batch ALD tools to its customers...

Levitech BV sells two Levitrack® ALD Systems

Levitech BV sells two Levitrack® ALD Systems to a major Japanese multinational...

ALD R&D Equipment Chart

ALD Pulse has put together, with the input and feedback from various manufacturers of ALD equipment, the ALD R&D EQUIPMENT CHART

Arradiance® Introduces Their GEMstar XT-P™

Arradiance® Introduces Their GEMstar XT-P™, the First Benchtop Thermal and Plasma-Enhanced ALD System for Research

ALD Pulse Interviews: Paul Poodt, Program manager Spatial ALD at Holst Centre / TNO

ALD Pulse had the honour to interview Paul Poodt, Program manager Spatial ALD at Holst Centre / TNO.

 Watch the interview.                                                                 

Three investments in France to accelerate the Group’s innovation

03/14/2014 Air Liquide has just decided on three investments in France to help accelerate the Group’s innovation and explore new markets. These three initiatives represent an investment of nearly €100 million.

SUNY CNSE, G450C, Quad-C… Albany rising!

The birth of SUNY CNSE (College of Nanoscale Science and Engineering), The G450C (Global 450 Consortium) The first step towards the Quad-C (Computer Chip Commercialization Center), all seems to be going well in Albany. Here is what President Obama thinks of it all.

PhD position on Advanced ALD

PhD position on Advanced ALD. The Electro-Optical Communication Systems (ECO) group, Department of Electrical Engineering of the Eindhoven University of Technology 

Global Atomic Layer Deposition Market 2012-2016

 TechNavio's report, the Global Atomic Layer Deposition Market 2012-2016, has been prepared based on an in-depth market analysis with inputs from industry experts. The report covers the Americas, and the EMEA and APAC regions; it also covers the Global Atomic Layer Deposition market landscape and its growth prospects in the coming years......

Publication plan for the virtual project on the history of ALD 2.0

This is the updated version 2.0 to the publication plan of the “virtual project on the history of ALD”, introduction of which and invitation to participate can be found here and introductory slides from hereThe goals of the publication plans are...

Virtual Project, "History of ALD"

Introduction and invitation to participate, Riikka Puurunen (Dr.), Senior Scientist, VTT Finland. Aziz Abdulagatov (Dr.), Postdoctoral Fellow, NIST, USA. Jonas Sundqvist (Dr.), Group Leader, Fraunhofer.IPMS-CNT, Germany. Annina Titoff, Editor in Chief ALD Pulse, Finland.

Toward atomically-precise synthesis of supported bimetallic nanoparticles using ALD

Multi-metallic nanoparticles constitute a new class of materials offering the opportunity to tune the properties via the composition.....

Atomic layer deposition of environmentally benign SnTiOx as a potential ferroelectric material

[Full text] Inspired by the need to discover environmentally friendly, lead-free ferroelectric materials, here the authors report the atomic layer deposition of tin titanate (SnTiOx) aiming to obtain the theoretically predicted perovskite structure that possesses ferroelectricity.

Atomic layer deposition process optimization by computational fluid dynamics

This paper presents a computational fluid dynamics model to optimize atomic layer deposition (ALD) process, in which the temperature, precursor mass fraction, mass flow and pressure have been quantitatively analyzed by combining surface chemical reactions with species transport.

Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films

[Full text] This paper presents a study on plasma enhanced atomic layer deposition(ALD) of TiO2 and WO3films on silicon substrates. At low temperatures, ALD processes, which are not feasible at high temperatures, could be possible.